Metallic Components for Ion Implantation57

1. Product Name:Metallic Components for Ion Implantation

2. Product Description:1. Product name: Ion Implanter Spare Parts Manufacture of modern integrated circuits. It implants doping elements into the semiconductor wafer in an ion-accelerated manner, changes its conductive properties, and finally forms the desired device structure. Ion implanter spare parts are important parts of the ion implanter. 2. Ion implantation is doping that can achieve controllable quantity and quality 2.1 Doping changes the electrical properties of the wafer. Due to the poor electrical conductivity of intrinsic silicon (ie, silicon single crystal without impurities), it can only function as a semiconductor when an appropriate amount of impurities is added to the silicon to change its structure and electrical properties. This process is called doping. . Silicon doping is the basis for the preparation of P-N junctions in semiconductor devices. It refers to doping the required impurity atoms into a specific semiconductor region to locally dope the substrate and change the electrical properties of the semiconductor. It has been widely used in chips. the whole process of manufacturing. In chip manufacturing, both thermal diffusion and ion implantation can introduce impurity elements into silicon wafers. The specific differences are as follows: 2.2 Thermal Diffusion: Using high temperature to drive impurities through the lattice structure of silicon, the effect of doping is affected by time and temperature. 2.3 Ion implantation: The impurity is introduced into the silicon wafer by high-voltage ion bombardment, and the impurity can be implanted after the atomic-level high-energy collision with the silicon wafer. In the ion implantation process, the implanted ions include B, P, As, Sb, C, Si, Ge, O, N, H ions, and so on. 2.4 Precise controllability makes ion implantation the most important doping method. With the continuous reduction of chip feature size and the increase in integration, various devices are also constantly shrinking. Since the performance of transistors is increasingly affected by the doping profile, ion implantation is the only means that can accurately control doping and can repeat control of doping concentration and depth has resulted in the transition from thermal diffusion to ion implantation for almost all doping processes in modern wafer fabrication. 3. Our Company and Factory Baoji Magotan Nonferrous Metals Co., Ltd has many years of experience in the production, sales, and R&D of non-ferrous metal deep processing parts. The grain size of ion implanter spare parts produced by Magotan is accurate, relative density is =99%, the high-temperature mechanical properties are significantly improved compared with ordinary materials, and the service life is prolonged. 4. Packaging: ? Outer wooden box packing, inner foam board; ? Outer carton packaging, inner moisture-proof paper; ? Negotiated by both parties.

3. Price:10.00

4. Product Website: http://www.mtionsource.com

5. Company Description: Baoji Magotan Nonferrous Metals Co., Ltd

6. Address: ShaanxiShaanxiBaojiWeibinBaoTi Rd, Weibin District, Baoji, Shaanxi, China721013

7. Descption: Our Factory Baoji Magotan Nonferrous Metals Co., Ltd with a registered capital of RMB 5 million, is located in BaoTi Industrial Park, BaoTi Road, Baoji, Shaanxi Province. Magotan covers an area of more than 3,000 square meters and has 50+ employees. Our equipment includes 6 CNC and CNC lathes, 2 surface grinders, 1 cylindrical grinder, 3 heat treatment furnaces, and more than 10 wire cutting, and laser cutting machines. One two-bar 550 rolling mills, one four-bar 650 rolling mills, one press machine, and one laser marking machine.

8. Registered Capital: 100

9. EmployeeNum: 100

Baoji Magotan Nonferrous Metals Co., Ltd

10. Contact: Fiona Zhao

11. Telphone: 86-0917-3229939

12. Fax: 86-0917-3229939

13. Email: 81463350@aliyun.com

14. Company Website: https://www.mtionsource.com